Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility
['Jun-Hui Yuan', 'Biao Zhang', 'Xiang-Shui Miao']
/
Journal of Materials Science
/ Vol. 54
/ No. 9
0.0 / 5
0
Reviews
You must log in to post, edit and delete a review.
Log in
Earn 50 points when your review is published.
About KnowledgeRank Points
No reviews have been posted yet. Be the first to write one!