Tuning the oxygen vacancy concentration in (GeMnTiSnMo)O2 high-entropy oxides for high dielectric through In2O3 doping
['Zhenyan Zhang', 'Huan Chai', 'Xiwei Qi']
/
Journal of Materials Science
/ Vol. 60
/ No. 48
0.0 / 5
0
Reviews
You must log in to post, edit and delete a review.
Log in
Earn 50 points when your review is published.
About KnowledgeRank Points
No reviews have been posted yet. Be the first to write one!