Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
['Hanearl Jung', 'Woo-Hee Kim', 'Hyungjun Kim']
/
Journal of Materials Science
/ Vol. 51
/ No. 11
0.0 / 5
0
Reviews
You must log in to post, edit and delete a review.
Log in
Earn 50 points when your review is published.
About KnowledgeRank Points
No reviews have been posted yet. Be the first to write one!