Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices
['Aysegul Kahraman', 'Seetharama C. Deevi', 'Ercan Yilmaz']
/
Journal of Materials Science
/ Vol. 55
/ No. 19
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